標題: Using KrF ELA to Improve Gate-Stacked LaAlO3/ZrO2 Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique
作者: Wu, Chien-Hung
Chang, Kow-Ming
Chen, Yi-Ming
Huang, Bo-Wen
Zhang, Yu-Xin
Wang, Shui-Jinn
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: AP-PECVD;IGZO-TFTs;Excimer Laser Annealing;Mobility Enhancement
公開日期: 1-Mar-2018
摘要: Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique and KrF excimer laser annealing (ELA) were employed for the fabrication of indium gallium zinc oxide thin-film transistors (IGZO-TFTs). Device with a 150 mJ/cm(2) laser annealing densities demonstrated excellent electrical characteristics with improved on/off current ratio of 4.7x10(7), high channel mobility of 10 cm(2)/V-s, and low subthreshold swing of 0.15 V/dec. The improvements are attributed to the adjustment of oxygen vacancies in the IGZO channel to an appropriate range of around 28.3% and the reduction of traps at the high-k/IGZO interface.
URI: http://dx.doi.org/10.1166/jnn.2018.14976
http://hdl.handle.net/11536/144589
ISSN: 1533-4880
DOI: 10.1166/jnn.2018.14976
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 18
起始頁: 1917
結束頁: 1921
Appears in Collections:Articles