Numerical Simulation of Physical and Electrical Characteristics of Ge/Si Quantum Dots Based Intermediate Band Solar Cell

Abstract

According to the Bloch theorem and the symmetry of superlattice configuration, a new 3D finite element method is employed to calculate the miniband structure and density of state for well-aligned Ge/Si QDs array. This method can overcome the approximation of multi-dimensional Kronig-Penny model and constrain on QDs superlattice structure. The interaction of electronic structure among Ge/Si QDs with various density of QDs therough QDs dimension and superlattice structure is investigated to provide a design guideline for QDs solar cell.