標題: The Investigation for In-Ga-Zn-O TFTs with Post Deposition of in-situ Ar/H-2 Plasma Treatment by Atmospheric Pressure Plasma Jet
作者: Chang, Kow-Ming
Huang, Bo-Wen
Wu, Chien-Hung
Chen, Hsin-Ying
Zheng, You-Xian
Lee, Ming-Chuan
Zhang, Yu-Xin
Lin, Chuang-Ju
Cheng, Yu-Hsuan
Wang, Shui-Jinn
Hsu, Jui-Mei
Lin, Yu-Li
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: AP-PECVD;APPJ;IGZO TFTs;in-situ Ar/H-2 plasma treatment
公開日期: 2016
摘要: Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was applied for the fabrication of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). In this work, a-IGZO TFTs fabricated by AP-PECVD technique were firstly treated by post deposition of in-situ Ar/H-2 plasma with atmospheric pressure plasma Jet (APPJ). Compared to without plasma treatment, samples with the post in-situ Ar/H-2 plasma treatment on IGZO active layer exhibited higher mobility of 20.12 cm(2)/V.S, V-T of 1.11 V, lower subthreshold swing of 93 mV/decade, higher I-on/I-off of 5.34x10(7). The excellent IGZO TFTs fabricated by AP-PECVD technique also show highly transparent characteristics.
URI: http://hdl.handle.net/11536/134640
ISBN: 978-1-5090-1493-4
期刊: 2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)
起始頁: 405
結束頁: 407
Appears in Collections:Conferences Paper