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dc.contributor.authorChen, Ching-Enen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorLu, Ying-Hsinen_US
dc.contributor.authorChen, Hua-Maoen_US
dc.contributor.authorChen, Bo-Weien_US
dc.contributor.authorPan, Chih-Hungen_US
dc.contributor.authorHung, Yu-Juen_US
dc.date.accessioned2017-04-21T06:48:50Z-
dc.date.available2017-04-21T06:48:50Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-5090-1493-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/134642-
dc.description.abstractThis paper studies the degradation behaviors in IV characteristics and the corresponding improvement for p-channel double diffused drain metal-oxide-semiconductor (DDDMOS) transistors after hot carrier stress (HCS). There is an apparent current which is flowed from source to drain in the off-region after HCS. According to the IV characteristic comparisons between different device structures and ISE-TCAD simulation results, the location and mechanism of this abnormal off-current can be demonstrated. Furthermore, this off-current is suppressed effectively by the different process flows in STI fabrication for this DDDMOS device.en_US
dc.language.isoen_USen_US
dc.titleInvestigation of Abnormal Off-Current in p-Channel Double Diffused Drain Metal-Oxide-Semiconductor Transistors after Hot Carrier Stressen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)en_US
dc.citation.spage777en_US
dc.citation.epage779en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000391840000220en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper