标题: | Identical Off-state Current Raise Induced by Photo-induced Schottky Barrier Lowering in a-InGaZnO4 Thin Film Transistors |
作者: | Chen, Hua-Mao Chang, Ting-Chang Liao, Po-Yung Chiang, Hsiao-Cheng Chen, Ching-En Chen, Bo-Wei Pan, Chih-Hung Hung, Yu-Ju 电子工程学系及电子研究所 光电工程学系 Department of Electronics Engineering and Institute of Electronics Department of Photonics |
关键字: | UV light;IGZO;depletion length;photo current |
公开日期: | 2016 |
摘要: | This work studies the mechanism of identical photoinduced leakage current in a-InGaZnO4 thin film transistors during reverse gate voltage sweep. There is the identical off-state current with the reverse sweep under UV light irradiation, and the photocurrent for UV light exposure region near the source electrode is more significant than that near the drain electrode, which is different from photocurrent mechanism of low temperature polysilicon TFTs. This is because the photo-generated electrons increase the carrier concentration in a-InGaZnO4 bulk, causing the reduced depletion width of the active layer. Therefore, the back channel of active layer is out of gate control. |
URI: | http://hdl.handle.net/11536/134643 |
ISBN: | 978-1-5090-1493-4 |
期刊: | 2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) |
起始页: | 783 |
结束页: | 786 |
显示于类别: | Conferences Paper |