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dc.contributor.authorChen, Peng-Yuen_US
dc.contributor.authorWu, Chu-Chunen_US
dc.contributor.authorFan, Yan-Tingen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.date.accessioned2017-04-21T06:48:49Z-
dc.date.available2017-04-21T06:48:49Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-5090-1493-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/134645-
dc.description.abstractThe plasma oxidation on single crystalline Al thin film grown by molecular beam epitaxy is presented. The dependence of oxidation rates on the N2O flux, the substrate temperature, the RF power, and the chamber pressure is studied with auger electron spectroscopy and transmission electron microscope. Our work provides a simple way to prepare a smooth nano-scale Al(2)O(3 f)ilm on aluminum, which is a key step to fabricate ultraviolet plasmonic nanolasers.en_US
dc.language.isoen_USen_US
dc.titleNano-scale oxide layer prepared by plasma oxidation on single-crystalline aluminum filmen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)en_US
dc.citation.spage809en_US
dc.citation.epage811en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000391840000230en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper