Nano-scale oxide layer prepared by plasma oxidation on single-crystalline aluminum film

Abstract

The plasma oxidation on single crystalline Al thin film grown by molecular beam epitaxy is presented. The dependence of oxidation rates on the N2O flux, the substrate temperature, the RF power, and the chamber pressure is studied with auger electron spectroscopy and transmission electron microscope. Our work provides a simple way to prepare a smooth nano-scale Al(2)O(3 f)ilm on aluminum, which is a key step to fabricate ultraviolet plasmonic nanolasers.