Growth of atomic-scale aluminum film on GaAs substrate

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DC 欄位	值	語言
dc.contributor.author	Lo, Ming-Cheng	en_US
dc.contributor.author	Fan, Yen-Ting	en_US
dc.contributor.author	Wu, Chu-Chun	en_US
dc.contributor.author	Chen, Peng-Yu	en_US
dc.contributor.author	Lin, Sheng-Di	en_US
dc.date.accessioned	2017-04-21T06:48:52Z	-
dc.date.available	2017-04-21T06:48:52Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-5090-1493-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134648	-
dc.description.abstract	We present the method for large-area growth of single-crystalline Al films in atomic scale on GaAs substrate by using molecular beam epitaxy. The grown Al film of thickness down to 5 nm exhibits smooth surface morphology, a clear and single X-ray diffraction peak in. theta-2 theta scan, and nearly transparent optical response. This work open a window for ex-situ studying quantum size effect in metal film.	en_US
dc.language.iso	en_US	en_US
dc.title	Growth of atomic-scale aluminum film on GaAs substrate	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)	en_US
dc.citation.spage	868	en_US
dc.citation.epage	870	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000391840000247	en_US
dc.citation.woscount	0	en_US
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