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dc.contributor.authorHulme, Jareden_US
dc.contributor.authorKennedy, M. J.en_US
dc.contributor.authorChao, Rui-Linen_US
dc.contributor.authorKomljenovic, Tinen_US
dc.contributor.authorShi, Jin-Weien_US
dc.contributor.authorBowers, J. E.en_US
dc.date.accessioned2017-04-21T06:48:47Z-
dc.date.available2017-04-21T06:48:47Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-5090-1602-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/134659-
dc.description.abstractwe demonstrate InP based evanescently-coupled pi-n photodiodes heterogeneously integrated onto silicon-on insulator substrate. Using advanced waveguide structures and fabrication processes, it simultaneously achieves 67 GHz O-E bandwidth (RC-free), broad optical window (1520-1600nm) with 0.5 A/W internal responsivity, and high saturation currents (9 mA at 70 GHz).en_US
dc.language.isoen_USen_US
dc.titleHeterogeneously Integrated InP Based 14,vanescentlyCoupled High-Speed and High-Power p-i-n Photodiodes on Silicon-on-Insulator (SOI) Substrateen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 IEEE INTERNATIONAL TOPICAL MEETING ON MICROWAVE PHOTONICS (MWP)en_US
dc.citation.spage233en_US
dc.citation.epage236en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000391567300046en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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