On the prediction of geometry-dependent floating-body effect in SOI MOSFETs

Abstract

This brief demonstrates that, through the perspective of body-source built-in potential lowering (Delta V-bi), the geometry-dependent floating-body effect in state-of-the-art silicon-on-insulator (SOI) MOS-FETs can be explained and predicted by the geometry dependence of threshold voltage (V-T). The correlation between Delta V-bi and V-T unveiled in this brief is the underlying mechanism responsible for the coexistence of partially depleted and fully depleted devices in a single SOI chip.