Heterogeneously Integrated InP Based 14,vanescentlyCoupled High-Speed and High-Power p-i-n Photodiodes on Silicon-on-Insulator (SOI) Substrate

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DC 欄位	值	語言
dc.contributor.author	Hulme, Jared	en_US
dc.contributor.author	Kennedy, M. J.	en_US
dc.contributor.author	Chao, Rui-Lin	en_US
dc.contributor.author	Komljenovic, Tin	en_US
dc.contributor.author	Shi, Jin-Wei	en_US
dc.contributor.author	Bowers, J. E.	en_US
dc.date.accessioned	2017-04-21T06:48:47Z	-
dc.date.available	2017-04-21T06:48:47Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-5090-1602-0	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134659	-
dc.description.abstract	we demonstrate InP based evanescently-coupled pi-n photodiodes heterogeneously integrated onto silicon-on insulator substrate. Using advanced waveguide structures and fabrication processes, it simultaneously achieves 67 GHz O-E bandwidth (RC-free), broad optical window (1520-1600nm) with 0.5 A/W internal responsivity, and high saturation currents (9 mA at 70 GHz).	en_US
dc.language.iso	en_US	en_US
dc.title	Heterogeneously Integrated InP Based 14,vanescentlyCoupled High-Speed and High-Power p-i-n Photodiodes on Silicon-on-Insulator (SOI) Substrate	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 IEEE INTERNATIONAL TOPICAL MEETING ON MICROWAVE PHOTONICS (MWP)	en_US
dc.citation.spage	233	en_US
dc.citation.epage	236	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000391567300046	en_US
dc.citation.woscount	0	en_US
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