標題: Two Competing Limiters in MOSFETs Scaling: Neutral Defects and S/D Plasmons
作者: Hsieh, Shang-Hsun
Hung, Jo-Chun
Weng, Heng-Jui
Tsai, Ming-Fu
Chiang, Chih-Chi
Chen, Ming-Jer
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2016
摘要: On the industrial HKMG silicon MOSFETs with different channel lengths L down to 14 nm, we present high-resolution TEM cross-section images to highlight interstitial defects in the channel near the source and drain. To examine such neutral defects, we devise a new 2D microscopic scattering model and use it to extract the apparent neutral defects density from the measured inversion-layer effective mobility. We find that for L > 25 nm, the extracted defect densities are independent of temperature, as expected. However, for L < 25 nm, the plasmons in the highly doped source and drain regions prevail over neutral defects. Further measured degradation in the virtual source velocity at saturation matches that of full Coulomb Monte Carlo simulation, for the first time experimentally confirming S/D plasmons as the dominant mechanism for L < 25 nm.
URI: http://hdl.handle.net/11536/134671
ISBN: 978-1-5090-0726-4
期刊: 2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)
起始頁: 32
結束頁: 33
Appears in Collections:Conferences Paper