標題: Contact resistance reduction on layered MoS2 by Ar plasma pre-treatment
作者: Ho, Yen-Teng
Chu, Yung-Ching
Jong, Chao An
Chen, Hung-Yi
Lin, Meng-Wei
Zhang, Ming
Chien, Po-Yen
Tu, Yung-Yi
Woo, Jason
Chang, Edward Yi
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2016
摘要: The effect of resistance (Rc) reduction of Ti/Au contact on MoS2 by ICP Ar plasma pretreatment is presented. The lowest Rc of 1.72 ohm-cm was achieved with the ICP treatment condition of 50W (ICP) /2W (chuck) for 10 sec. Compared with the contact without treatment (19.6 ohm-cm), the Rc improves over 10 times, demonstrating the advantage of Ar plasma pre-treatment on MoS2 contact.
URI: http://hdl.handle.net/11536/134673
ISBN: 978-1-5090-0726-4
期刊: 2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)
起始頁: 52
結束頁: 53
Appears in Collections:Conferences Paper