標題: | Contact resistance reduction on layered MoS2 by Ar plasma pre-treatment |
作者: | Ho, Yen-Teng Chu, Yung-Ching Jong, Chao An Chen, Hung-Yi Lin, Meng-Wei Zhang, Ming Chien, Po-Yen Tu, Yung-Yi Woo, Jason Chang, Edward Yi 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2016 |
摘要: | The effect of resistance (Rc) reduction of Ti/Au contact on MoS2 by ICP Ar plasma pretreatment is presented. The lowest Rc of 1.72 ohm-cm was achieved with the ICP treatment condition of 50W (ICP) /2W (chuck) for 10 sec. Compared with the contact without treatment (19.6 ohm-cm), the Rc improves over 10 times, demonstrating the advantage of Ar plasma pre-treatment on MoS2 contact. |
URI: | http://hdl.handle.net/11536/134673 |
ISBN: | 978-1-5090-0726-4 |
期刊: | 2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) |
起始頁: | 52 |
結束頁: | 53 |
Appears in Collections: | Conferences Paper |