Synthesis of Wafer-Scale WSe2 by WOx Selenization on SiO2 / Si Substrates

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DC 欄位	值	語言
dc.contributor.author	Chu, Yung-Ching	en_US
dc.contributor.author	Jong, Chao-An	en_US
dc.contributor.author	Ho, Yen-Teng	en_US
dc.contributor.author	Zhang, Ming	en_US
dc.contributor.author	Chien, Po-Yen	en_US
dc.contributor.author	Hsu, Hung-Ru	en_US
dc.contributor.author	Chen, Hung-Yi	en_US
dc.contributor.author	Tu, Yung-Yi	en_US
dc.contributor.author	Pande, Krishna P.	en_US
dc.contributor.author	Woo, Jason C. S.	en_US
dc.contributor.author	Chang, Edward Yi	en_US
dc.date.accessioned	2017-04-21T06:48:46Z	-
dc.date.available	2017-04-21T06:48:46Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-5090-0726-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134674	-
dc.description.abstract	Scalable synthesis of thin tungsten diselenide (WSe2) films on 4-inch silicon substrate with 80 nm silicon dioxide (SiO2) is demonstrated. Cross-sectional transmission electron microscopy (TEM) reveals good control of WSe2 layers. Raman spectroscopy confirms high quality crystal of WSe2 is achieved. Back-gated field-effect transistors (FETs) fabricated on these thin films exhibit p-channel characteristics with a good on/off current ratio larger than 1.2 x 10(2).	en_US
dc.language.iso	en_US	en_US
dc.title	Synthesis of Wafer-Scale WSe2 by WOx Selenization on SiO2 / Si Substrates	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)	en_US
dc.citation.spage	54	en_US
dc.citation.epage	55	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	電機工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Department of Electrical and Computer Engineering	en_US
dc.identifier.wosnumber	WOS:000391250500023	en_US
dc.citation.woscount	0	en_US
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