Reliable Doping Technique for WSe2 by W: Ta Co-Sputtering Process

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chien, Po-Yen	en_US
dc.contributor.author	Zhang, Ming	en_US
dc.contributor.author	Huang, Shao-Chia	en_US
dc.contributor.author	Lee, Min-Hung	en_US
dc.contributor.author	Hsu, Hung-Ru	en_US
dc.contributor.author	Ho, Yen-Teng	en_US
dc.contributor.author	Chu, Yung-Ching	en_US
dc.contributor.author	Jong, Chao-An	en_US
dc.contributor.author	Woo, Jason	en_US
dc.date.accessioned	2017-04-21T06:48:46Z	-
dc.date.available	2017-04-21T06:48:46Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-5090-0726-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134675	-
dc.description.abstract	The electrical and material properties of WSe2 doped by W:Ta co-sputtering process were examined. High acceptor doping concentration (6x10(13)cm(-2)) and good effective hole mobility (16.5cm(2)/Vs) were realized. As a result, low sheet resistance (17k Omega/sq) and contact resistance with Pd metal (11.4k Omega-mu m) were measured using TLM structures.	en_US
dc.language.iso	en_US	en_US
dc.title	Reliable Doping Technique for WSe2 by W: Ta Co-Sputtering Process	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)	en_US
dc.citation.spage	58	en_US
dc.citation.epage	59	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000391250500025	en_US
dc.citation.woscount	0	en_US
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