Short-Channel ZnON Thin-Film Transistors with Film Profile Engineering

Abstract

Short-channel zinc oxynitride (ZnON) thin-film transistors (TFTs) were fabricated based on the film profile engineering in combination with e-beam lithographical patterning. ZnON films were deposited using reactive magnetron sputtering in N-2/O-2 ambient and exhibit a Hall mobility of 95 cm(2)/V-s. A ZnON TFT with channel length of 147nm shows high on/off current ratio of 5x10(7) and field-effect mobility of 9.1 cm(2)/Vs, which are superior or comparable to their counterparts of IGZO or ZnO TFTs.