Re-examination the Effects of Selenium Segregation on the Schottky Barrier Height Reduction of the NiGe/Ge Contact

Abstract

Effect of selenium segregation on the Schottky barrier height of the NiGe/Ge interface is examined. By carefully designed experiments, ion implantation damages in Ge can be avoided so that the pure effect of Se segregation can be examined. The best result achieved in this work is 0.1 eV barrier height reduction. A 10 times contact resistivity reduction is expected.