標題: | Effects of Vanadium Incorporation on the Electron Schottky Barrier Height Reduction of NiGe/Ge |
作者: | Chen, Yi-Ju Tsui, Bing-Yue 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Germanium;Schottky barrier height;vanadium |
公開日期: | 1-一月-2017 |
摘要: | Effects of vanadium incorporation on the electron Schottky barrier height reduction of NiGe/Ge is investigated. The best results achieved in this work is 70 meV electron Schottky barrier height reduction by depositing vanadium layer followed by Ar ion bombardment. |
URI: | http://hdl.handle.net/11536/147108 |
期刊: | 2017 INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) |
顯示於類別: | 會議論文 |