標題: Effects of Vanadium Incorporation on the Electron Schottky Barrier Height Reduction of NiGe/Ge
作者: Chen, Yi-Ju
Tsui, Bing-Yue
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Germanium;Schottky barrier height;vanadium
公開日期: 1-一月-2017
摘要: Effects of vanadium incorporation on the electron Schottky barrier height reduction of NiGe/Ge is investigated. The best results achieved in this work is 70 meV electron Schottky barrier height reduction by depositing vanadium layer followed by Ar ion bombardment.
URI: http://hdl.handle.net/11536/147108
期刊: 2017 INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
顯示於類別:會議論文