Effects of Vanadium Incorporation on the Electron Schottky Barrier Height Reduction of NiGe/Ge

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, Yi-Ju	en_US
dc.contributor.author	Tsui, Bing-Yue	en_US
dc.date.accessioned	2018-08-21T05:57:09Z	-
dc.date.available	2018-08-21T05:57:09Z	-
dc.date.issued	2017-01-01	en_US
dc.identifier.uri	http://hdl.handle.net/11536/147108	-
dc.description.abstract	Effects of vanadium incorporation on the electron Schottky barrier height reduction of NiGe/Ge is investigated. The best results achieved in this work is 70 meV electron Schottky barrier height reduction by depositing vanadium layer followed by Ar ion bombardment.	en_US
dc.language.iso	en_US	en_US
dc.subject	Germanium	en_US
dc.subject	Schottky barrier height	en_US
dc.subject	vanadium	en_US
dc.title	Effects of Vanadium Incorporation on the Electron Schottky Barrier Height Reduction of NiGe/Ge	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2017 INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000426985900156	en_US
顯示於類別：	會議論文