Effects of Vanadium Incorporation on the Electron Schottky Barrier Height Reduction of NiGe/Ge

標題:	Effects of Vanadium Incorporation on the Electron Schottky Barrier Height Reduction of NiGe/Ge
作者:	Chen, Yi-Ju Tsui, Bing-Yue 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	Germanium;Schottky barrier height;vanadium
公開日期:	1-Jan-2017
摘要:	Effects of vanadium incorporation on the electron Schottky barrier height reduction of NiGe/Ge is investigated. The best results achieved in this work is 70 meV electron Schottky barrier height reduction by depositing vanadium layer followed by Ar ion bombardment.
URI:	http://hdl.handle.net/11536/147108
期刊:	2017 INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
Appears in Collections:	Conferences Paper