Development and Electrical Performance of Low Temperature Cu-Sn/In Bonding for 3D Flexible Substate Integration

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hu, Yu-Chen	en_US
dc.contributor.author	Chen, Kuan-Neng	en_US
dc.date.accessioned	2017-04-21T06:48:46Z	-
dc.date.available	2017-04-21T06:48:46Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-5090-0726-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134682	-
dc.description.abstract	An innovative bonding approach applied to flexible substrate bonding is proposed in this research. Thin-film metal pad is fabricated as bonding medium to provide vertical stacking. As compared to other bonding methods, such as anisotropic conductive film (ACF) or non-conductive paste (NCP), thin-film metal pad bonding approach provides the most attractive advantage of fine-pitch. The bonding condition at low temperature exhibits good electrical performance, proving its great potential in the applications of flexible substrate stacking.	en_US
dc.language.iso	en_US	en_US
dc.title	Development and Electrical Performance of Low Temperature Cu-Sn/In Bonding for 3D Flexible Substate Integration	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)	en_US
dc.citation.spage	164	en_US
dc.citation.epage	165	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000391250500071	en_US
dc.citation.woscount	0	en_US
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