標題: 3D-TCAD Simulation Study of the Contact All Around T-FinFET Structure for 10nm Metal-Oxide-Semiconductor Field-Effect Transistor
作者: Chou, Chen-Han
Hsu, Chung-Chun
Yeh, Wen-Kuan
Chung, Steve S.
Chien, Chao-Hsin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2016
摘要: We propose a new device structure, namely CAA T-FinFET, for 10nm MOSFETs with using contact all around (CAA) structure. According to 3D simulation study, the CAA T-FinFET possess many advantages over the conventional FinFET structure, such as short channel effect (SCE) suppression by self-aligned oxide (SA oxide), parasitic leakage path isolation with body-tied bulk, sourceldrain series resistance reducing and fin to fin pitch scaling by contact all around process. Base on heterogeneous bulk for strain application, CAA T-FinFET has better electrical performance and easy process control. All these advantages are achieved by depositing a self-aligned oxide after isotropic etching in SID region. Contact all around can efficiently solve the series resistance degradation and pitch scaling by replacing diamond-shape SID stressor with the full contact metal. CAA T-FinFET has high potential to be applied to the varied heterogeneous substrate and high mobility channel (Ge and III-V) MOSFETs by SA oxide.
URI: http://hdl.handle.net/11536/134683
ISBN: 978-1-5090-0726-4
期刊: 2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)
起始頁: 190
結束頁: 191
Appears in Collections:Conferences Paper