標題: Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si Photonics
作者: Kuo, Ming-Hao
Lee, M. C.
Tien, J. W.
Lai, Wei-Ting
Li, Pei-Wen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2016
摘要: Ge-dot/SiO2/SiGe-channel photoMOSFETs are demonstrated on a Si-photonics platform. The photoMOSFET is fabricated in standard CMOS processes with a self-organized gate stack of Ge-dot/SiO2/SiGe-channel using thermal oxidation of SiGe nanopillars over Si3N4 layers on Si substrates. The Ge-dot photoMOSFET, with 3 mu m channel length and 70 mu m channel width, features responsivity of over 2000A/W and 100 A/W with 6pW and 0.2 mu W, respectively, under illumination at 850nm. The responsivity is further improved by reducing the dot size and increasing the spatial density and most importantly, is insensitive to the gate oxide thickness, which is a great benefit for reducing the input capacitance and thus, improving speed and power consumption.
URI: http://hdl.handle.net/11536/134684
ISBN: 978-1-5090-0726-4
期刊: 2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)
起始頁: 212
結束頁: 213
顯示於類別:會議論文