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dc.contributor.authorLee, WDen_US
dc.contributor.authorChen, JLen_US
dc.contributor.authorYang, TJen_US
dc.contributor.authorChiou, BSen_US
dc.date.accessioned2014-12-08T15:02:43Z-
dc.date.available2014-12-08T15:02:43Z-
dc.date.issued1996-04-20en_US
dc.identifier.issn0921-4534en_US
dc.identifier.urihttp://hdl.handle.net/11536/1346-
dc.description.abstractThe surface superconductivity induced by applying an electric field perpendicular to the surface of a high-T-c superconductor covered by an insulator and a gate electrode is studied theoretically. Taking the idea into account that the change of the surface carrier density confined in a thin screening layer modulates the transport properties of superconductors, we develop a simple method based on the Chen and Yang model to study the T-c shift dependence on the applied voltage in the frameworks of a Thomas-Fermi approximation and BCS theory. In such a case a novel boundary condition is introduced to modify the G-L equations. Solving the modified one, the T-c shift derived by the present model is similar in qualitative behavior to the Shapiro result, but much simpler in form. In addition, it is shown to be proportional to the applied field (the square of applied field) for thin film (thick film) for a given material. Based on our simple results, the critical current density J(c) and nucleation field H-c3 as functions of the applied voltage are easily derived.en_US
dc.language.isoen_USen_US
dc.titleInfluence of an external electric field on high-T-c superconductivityen_US
dc.typeArticleen_US
dc.identifier.journalPHYSICA Cen_US
dc.citation.volume261en_US
dc.citation.issue1-2en_US
dc.citation.spage167en_US
dc.citation.epage172en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1996UM98600021-
dc.citation.woscount6-
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