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dc.contributor.authorKuo, Ming-Zhangen_US
dc.contributor.authorHsieh, Henryen_US
dc.contributor.authorDhong, Sangen_US
dc.contributor.authorYang, Ping-Linen_US
dc.contributor.authorLin, Cheng-Chungen_US
dc.contributor.authorTseng, Ryanen_US
dc.contributor.authorHuang, Kevinen_US
dc.contributor.authorWang, Min-Jeren_US
dc.contributor.authorHwang, Weien_US
dc.date.accessioned2017-04-21T06:48:47Z-
dc.date.available2017-04-21T06:48:47Z-
dc.date.issued2014en_US
dc.identifier.isbn978-1-4799-3286-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/134704-
dc.description.abstractThis paper describes a tile-able 16-kByte 6-T SRAM macro in a High-K Metal-Gate (HKMG) 28-nm bulk technology with an operating window from 4.8 GHz at 1.12 V VDD down to 10 MHz at 0.5V, meeting almost all of the Dynamic Voltage Frequency Scaling (DVFS) requirements of Level-1 (L1) caches of a digital microprocessor SOC. It uses an unmodified technology-supported 0.156um(2) high-current (HC) SRAM cell. Innovative and carefully optimized circuit solutions provide the wide operating range measured in hardware. We also discuss two circuit improvements, a cross-coupled PMOS-pair for each bitline-pair with mux readout and an independently-controlled precharge-and-write driver (ICPW), which gives a wider DVFS operating window with reduced sensitivities to Process-Voltage-Temperature (PVT) variations. Improved SRAM macros with new circuits have been designed and laid out and their performance and area verified in simulation.en_US
dc.language.isoen_USen_US
dc.subjectCross-coupled PMOS-pairen_US
dc.subjectDVFSen_US
dc.subjectindependently controlled precharge-and-write driver (ICPW)en_US
dc.subjectSRAMen_US
dc.titleA 16kB Tile-able SRAM Macro Prototype for an Operating Window of 4.8GHz at 1.12V VDD to 10 MHz at 0.5V in a 28-nm HKMG CMOSen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 IEEE PROCEEDINGS OF THE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000349122300052en_US
dc.citation.woscount0en_US
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