标题: Type-II Ge/Si Quantum Dot superlattice for Intermediate-band Solar Cell Applications
作者: Hu, Weiguo
Fauzi, Mohd Erman
Igarashi, Makoto
Higo, Akio
Lee, Ming-Yi
Li, Yiming
Usami, Noritaka
Samukawa, Seiji
电机工程学系
Department of Electrical and Computer Engineering
关键字: quantum dot;amorphous materials;photovoltaic cells;silicon
公开日期: 2013
摘要: A Ge/Si type-II quantum dot (QD) has been developed for use in all-Si intermediate-band solar cell (IBSC) applications. A top-down process is used to fabricate the ultra-high-quality QD superlattice. A newly developed 3D finite element method was used to solve several key design problems in achieving a practical structure. Theoretical calculations revealed that a heavy hole state can act as an ideal intermediate band when the interdot space ranges from 0.5 to 4 nm. An IBSC based on this superlattice dramatically enhanced conversion efficiency for concentration applications. For one-sun applications, H-passivizing Si and/or regrowthing amorphous SiC have a great potential to improve the conversion efficiency.
URI: http://hdl.handle.net/11536/134727
ISBN: 978-1-4799-3299-3
ISSN: 0160-8371
期刊: 2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
起始页: 1021
结束页: 1023
显示于类别:Conferences Paper