标题: | Type-II Ge/Si Quantum Dot superlattice for Intermediate-band Solar Cell Applications |
作者: | Hu, Weiguo Fauzi, Mohd Erman Igarashi, Makoto Higo, Akio Lee, Ming-Yi Li, Yiming Usami, Noritaka Samukawa, Seiji 电机工程学系 Department of Electrical and Computer Engineering |
关键字: | quantum dot;amorphous materials;photovoltaic cells;silicon |
公开日期: | 2013 |
摘要: | A Ge/Si type-II quantum dot (QD) has been developed for use in all-Si intermediate-band solar cell (IBSC) applications. A top-down process is used to fabricate the ultra-high-quality QD superlattice. A newly developed 3D finite element method was used to solve several key design problems in achieving a practical structure. Theoretical calculations revealed that a heavy hole state can act as an ideal intermediate band when the interdot space ranges from 0.5 to 4 nm. An IBSC based on this superlattice dramatically enhanced conversion efficiency for concentration applications. For one-sun applications, H-passivizing Si and/or regrowthing amorphous SiC have a great potential to improve the conversion efficiency. |
URI: | http://hdl.handle.net/11536/134727 |
ISBN: | 978-1-4799-3299-3 |
ISSN: | 0160-8371 |
期刊: | 2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) |
起始页: | 1021 |
结束页: | 1023 |
显示于类别: | Conferences Paper |