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dc.contributor.authorHuang, Rei-Fuen_US
dc.contributor.authorYang, Hao-Yuen_US
dc.contributor.authorChao, Mango C. -T.en_US
dc.contributor.authorLin, Shih-Chinen_US
dc.date.accessioned2017-04-21T06:48:33Z-
dc.date.available2017-04-21T06:48:33Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-4503-1199-1en_US
dc.identifier.issn0738-100Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/134743-
dc.description.abstractThis paper presents a novel memory test algorithm, named alternate hammering test, to detect the pairwise word-line hammering faults for application-specific DRAMs. Unlike previous hammering tests, which require excessively long test time, the alternate hammering test is designed scalable to industrial DRAM arrays by considering the array layout for potential fault sites and the highest DRAM-access frequency in real system applications. The effectiveness and efficiency of the proposed alternate hammering test are validated through the test application to an eDRAM macro embedded in a storage-application SoC.en_US
dc.language.isoen_USen_US
dc.subjectembedded-DRAMen_US
dc.subjecthammering testen_US
dc.titleAlternate Hammering Test for Application-Specific DRAMs and an Industrial Case Studyen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 49TH ACM/EDAC/IEEE DESIGN AUTOMATION CONFERENCE (DAC)en_US
dc.citation.spage1012en_US
dc.citation.epage1017en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000309256800147en_US
dc.citation.woscount4en_US
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