標題: Optoelectronic properties in vertically aligned ZnO/Si-nanopillars
作者: Lee, Hsin-Yi
Chang, Yuan-Ming
Tseng, Wen-Shou
Kao, Pin-Hsu
Wang, Hau-Wei
Tai, Hung-Ming
Chang, Leh-Rong
Lin, Chih-Ming
Juang, Jenh-Yih
電子物理學系
Department of Electrophysics
關鍵字: ultrathin;ZnO;Si nanopillars;atomic layer deposition
公開日期: 2012
摘要: An effective method of fabricating vertically aligned silicon nanopillars (Si-NPs) was realized by using the self-assembled silver nanodots as natural metal-nanomask for subsequent etching process. Ultrathin (similar to 9 nm) ZnO films were deposited on the Si-NPs by atomic layer deposition to enhance the field emission property. The turn-on field defined by the 10 mu A/cm(2) current density criterion is similar to 0.74 V/mu m with an estimated beta similar to 1.33X10(4). The low turn-on field and marked enhancement in beta were attributed to the small radius of curvature, high aspect ratio, and perhaps more importantly, proper density distribution of the ZnO/Si-NPs. On the other hand, room-temperature ultraviolet (UV) luminescence was investigated for the atomic layer deposited ZnO films grown on Si nanowires fabricated by self-masking dry etching in hydrogen-containing plasma. For films deposited at 200 degrees C, an intensive UV emission corresponding to free-exciton recombination was observed with a nearly complete suppression of the defect-associated broad visible range emission peak.
URI: http://hdl.handle.net/11536/134745
ISBN: 978-1-4673-2200-3
期刊: 2012 12TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)
Appears in Collections:Conferences Paper