Simulation of Grain-Boundary Induced V-th Variability in Stackable NAND Flash Using a Voronoi Approach

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DC Field	Value	Language
dc.contributor.author	Yang, Ching-Wei	en_US
dc.contributor.author	Chao, Shao-Heng	en_US
dc.contributor.author	Su, Pin	en_US
dc.date.accessioned	2017-04-21T06:48:17Z	-
dc.date.available	2017-04-21T06:48:17Z	-
dc.date.issued	2012	en_US
dc.identifier.isbn	978-1-4673-2848-7	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134764	-
dc.description.abstract	In this work, we employ a novel Voronoi approach to simulate the impact of trap states in the poly-Si channel. Using this method, we investigate the grain boundary induced threshold voltage variability in stackable NAND flash memories. Our study indicates that considering the randomized shape and location of grain boundaries is crucial to the modeling and simulation of these devices.	en_US
dc.language.iso	en_US	en_US
dc.subject	Grain boundary	en_US
dc.subject	polycrystalline silicon	en_US
dc.subject	stackable NAND flash	en_US
dc.subject	BE-SONOS	en_US
dc.subject	variability	en_US
dc.subject	Voronoi	en_US
dc.title	Simulation of Grain-Boundary Induced V-th Variability in Stackable NAND Flash Using a Voronoi Approach	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2012 12th Annual Non-Volatile Memory Technology Symposium	en_US
dc.citation.spage	12	en_US
dc.citation.epage	15	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000392841300003	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper