完整後設資料紀錄
DC 欄位語言
dc.contributor.authorYeh, Y. -J.en_US
dc.contributor.authorAhn, H.en_US
dc.contributor.authorHong, Y. -L.en_US
dc.contributor.authorGwo, Shangjren_US
dc.date.accessioned2017-04-21T06:50:04Z-
dc.date.available2017-04-21T06:50:04Z-
dc.date.issued2010en_US
dc.identifier.isbn978-1-55752-890-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/134839-
dc.description.abstractSignificant THz power enhancement and polarity reversal were observed from Mg-doped InN. The carrier concentration-dependent THz polarity reversal reflects the interplay between the surface-electric-field and the photo-Dember field for THz emission from InN:Mg. (C)2010 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleTerahertz Emission of Magnesium doped Indiuen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS)en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000290513600246en_US
dc.citation.woscount0en_US
顯示於類別:會議論文