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dc.contributor.authorLin, Yen-Fuen_US
dc.contributor.authorJiye-Fangen_US
dc.contributor.authorJian, Wen-Binen_US
dc.date.accessioned2017-04-21T06:49:52Z-
dc.date.available2017-04-21T06:49:52Z-
dc.date.issued2010en_US
dc.identifier.isbn978-1-4244-3543-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/134878-
dc.description.abstractNanowires (NWs) of four different materials, including ZnO, InP, GaP, and Pb1-xMnxSe, have been used for the fabrication of two-probe electronic devices to study electrical transport properties. The average diameters of ZnO, InP, GaP, and Pb1-xMnxSe NWs are about 40, 25, 25, 70 nm, respectively. Both electron-beam lithography and dielectrophoresis techniques are employed to either deposit two Ti/Au electrodes on single NW or positioned the NW into nanometer gap between two electrodes. Temperature dependent behaviors of resistance of two-probe devices are measured to explore the electron transport either in the NW or in the nanocontact formed in the interface between the NW and the Ti/Au electrodes. Two-probe devices with high and low room-temperature resistance are used to inspect and distinguish the interplay between the nanocontact and the NW. After the separation of NW-dominated devices from contact-dominated ones, the thermally activated transport in semiconductor ZnO, MP, and GaP NWs and the temperature independent tunneling conduction in Pb1-xMnxSe NWs have been revealed. On the other hand, the contact-dominated devices display electron hopping transport in the nanocontact. Moreover, the fluctuation-induced tunneling conduction in the overlapped Pb1-xMnxSe NWs has been observed.en_US
dc.language.isoen_USen_US
dc.titleElectron Transport Properties of ZnO, InP, GaP, and Pb Se Nanowires By Two-Probe Measurementsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalINEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2en_US
dc.citation.spage1199en_US
dc.citation.epage+en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000282026500610en_US
dc.citation.woscount0en_US
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