標題: FUNDAMENTAL UNDERSTANDING OF POROUS LOW-K DIELECTRIC BREAKDOWN
作者: Lee, Shou-Chung
Oates, A. S.
Chang, Kow-Ming
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2009
摘要: We investigate the impact of porosity on the reliability of low-k dielectrics. We show that electric field enhancement around pores occurs and is significantly increased by Cu interaction, suggesting a new potential mechanism for breakdown of dielectrics at stress conditions. We develop of an analytic model to predict failure distribution parameters as a function of porosity and show that the model is in good agreement with measurements for porosity in the range of 5% to 40%. We explain why the field acceleration factor 7 is a constant for all silica-based material according to percolation theory. We propose that the percolation path difference between high field and low field would make the field dependence on failure time become non-linear.
URI: http://dx.doi.org/10.1109/IRPS.2009.5173300
http://hdl.handle.net/11536/134943
ISBN: 978-1-4244-2888-5
DOI: 10.1109/IRPS.2009.5173300
期刊: 2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2
起始頁: 481
結束頁: +
顯示於類別:會議論文