标题: Impact of NBTI and PBTI in SRAM Bit-cells: Relative Sensitivities and Guidelines for Application-Specific Target Stability/Performance
作者: Bansal, Aditya
Rao, Rahul
Kim, Jae-Joon
Zafar, Sufi
Stathis, James H.
Chuang, Ching-Te
交大名义发表
National Chiao Tung University
公开日期: 2009
摘要: The stability and performance characteristics of Static Random Access Memories (SRAMs) are known to degrade with time due to the impact of Negative and Positive Bias Temperature Instabilities (NBTI (in PFET) and PBTI (in NFET)). In this work, we provide insights into relative sensitivities of these phenomena on speed and stability of SRAM cells. Relative impact on access time, stability, and tolerability of one phenomenon over another has been studied for different application specific (high-performance or low-power) SRAM cells. We show that high-performance SRAM cells should have lower V-T drift due to PBTI compared with dense cells to contain READ stability and access time. Further, worst-case static stress poses tighter process constraints compared with alternating stress.
URI: http://dx.doi.org/10.1109/IRPS.2009.5173342
http://hdl.handle.net/11536/134944
ISBN: 978-1-4244-2888-5
DOI: 10.1109/IRPS.2009.5173342
期刊: 2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2
起始页: 745
结束页: +
显示于类别:Conferences Paper