标题: | Cell Endurance Prediction from a Large-area SONOS Capacitor |
作者: | Lee, C. H. Tu, W. H. Gu, S. H. Wu, C. W. Lin, S. W. Yeh, T. H. Chen, K. F. Chen, Y. J. Hsieh, J. Y. Huang, I. J. Zous, N. K. Han, T. T. Chen, M. S. Lu, W. P. Chen, K. C. Wang, Tahui Lu, C. Y. 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
公开日期: | 2009 |
摘要: | Endurance considerations induced by the degadation of top and bottom oxides are proposed for a SONOS memory. First, a correlation is found between the widespread C-V curves induced by interface generation and cycling numbers (cyc. #). Unlike V-FB (accumulation region), V-T (inversion region) shows a much severe shift. Inter-face state (N-it) is identified as a key factor even when a 2nm bottom oxide is used. Moreover, charge to breakdown (Q(BD)) for an ONO capacitor under positive and negative constant current stress (CCS) is investigated. Our study reveals that QBD of such stacks strongly depends on the top oxide thickness. A field enhancement induced by charges in a trapping nitride layer is the root cause. Based on Weibull statistics, the risk of dielectric breakdown for both blocking layers is then evaluated. |
URI: | http://dx.doi.org/10.1109/IRPS.2009.5173373 http://hdl.handle.net/11536/134946 |
ISBN: | 978-1-4244-2888-5 |
DOI: | 10.1109/IRPS.2009.5173373 |
期刊: | 2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2 |
起始页: | 891 |
结束页: | + |
显示于类别: | Conferences Paper |