Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure

doi:10.1149/1.3206625

標題:	Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure
作者:	Funamiz, K. Lin, Y. C. Kakushima, K. Ahmet, P. Tsutsui, K. Sugii, N. Chang, E. Y. Hattori, T. Iwai, H. 交大名義發表 National Chiao Tung University
公開日期:	2009
摘要:	InGaAs MOS capacitors with HfO2 and La2O3 gate dielectrics have been investigated. La2O3 capacitor was found to result in large leakage current. This can be attributed to the annealing-induced As diffusion into La2O3 layer from InGaAs substrate. This leakage current was found to be suppressed by inserting HfO2 layer between La2O3 layer and InGaAs.
URI:	http://dx.doi.org/10.1149/1.3206625 http://hdl.handle.net/11536/135005
ISBN:	978-1-60768-093-2 978-1-56677-743-8
ISSN:	1938-5862
DOI:	10.1149/1.3206625
期刊:	PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7
Volume:	25
Issue:	6
起始頁:	265
結束頁:	270
Appears in Collections:	Conferences Paper