標題: Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure
作者: Funamiz, K.
Lin, Y. C.
Kakushima, K.
Ahmet, P.
Tsutsui, K.
Sugii, N.
Chang, E. Y.
Hattori, T.
Iwai, H.
交大名義發表
National Chiao Tung University
公開日期: 2009
摘要: InGaAs MOS capacitors with HfO2 and La2O3 gate dielectrics have been investigated. La2O3 capacitor was found to result in large leakage current. This can be attributed to the annealing-induced As diffusion into La2O3 layer from InGaAs substrate. This leakage current was found to be suppressed by inserting HfO2 layer between La2O3 layer and InGaAs.
URI: http://dx.doi.org/10.1149/1.3206625
http://hdl.handle.net/11536/135005
ISBN: 978-1-60768-093-2
978-1-56677-743-8
ISSN: 1938-5862
DOI: 10.1149/1.3206625
期刊: PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7
Volume: 25
Issue: 6
起始頁: 265
結束頁: 270
Appears in Collections:Conferences Paper