Title: | Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure |
Authors: | Funamiz, K. Lin, Y. C. Kakushima, K. Ahmet, P. Tsutsui, K. Sugii, N. Chang, E. Y. Hattori, T. Iwai, H. 交大名義發表 National Chiao Tung University |
Issue Date: | 2009 |
Abstract: | InGaAs MOS capacitors with HfO2 and La2O3 gate dielectrics have been investigated. La2O3 capacitor was found to result in large leakage current. This can be attributed to the annealing-induced As diffusion into La2O3 layer from InGaAs substrate. This leakage current was found to be suppressed by inserting HfO2 layer between La2O3 layer and InGaAs. |
URI: | http://dx.doi.org/10.1149/1.3206625 http://hdl.handle.net/11536/135005 |
ISBN: | 978-1-60768-093-2 978-1-56677-743-8 |
ISSN: | 1938-5862 |
DOI: | 10.1149/1.3206625 |
Journal: | PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7 |
Volume: | 25 |
Issue: | 6 |
Begin Page: | 265 |
End Page: | 270 |
Appears in Collections: | Conferences Paper |