標題: Probing mobility gaps at resistivity minima in the integer quantum Hall effect
作者: Liang, C. -T.
Chen, K. Y.
Wu, Jau-Yang
Lin, S. D.
Lin, Li-Hung
Li, Yu-Ru
Tseng, Yen Shung
Yang, Chun-Kai
Lin, Po-Tsun
Cheng, K. A.
Huang, C. F.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2008
摘要: Magneto-transport measurements are performed on the AlGaAs/GaAs quantum Hall (QH) devices fabricated recently by our group. A series of Hall plateaus are observed with increasing the perpendicular magnetic field, and the mobility gaps resulting from localization effects are investigated at the minima in the longitudinal resistivity. Only the gap corresponding to the filling factor i=2 is close to the expected cyclotron energy, and our study supports that the low-field QH conductors may suffer problems due to insufficient localization. The anomalous change on the Hall slope is observed when the i=3 plateau is destroyed by the large current.
URI: http://dx.doi.org/10.1109/CPEM.2008.4574821
http://hdl.handle.net/11536/135030
ISBN: 978-1-4244-2399-6
DOI: 10.1109/CPEM.2008.4574821
期刊: 2008 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS DIGEST
起始頁: 398
結束頁: +
Appears in Collections:Conferences Paper