Stable High-Density FD/SOI SRAM with Selective Back-Gate Bias Using Dual Buried Oxide

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Kim, Keunwoo	en_US
dc.contributor.author	Kuang, Jente B.	en_US
dc.contributor.author	Gebara, Fadi	en_US
dc.contributor.author	Ngo, Hung C.	en_US
dc.contributor.author	Chuang, Ching-Te	en_US
dc.contributor.author	Nowka, Kevin J.	en_US
dc.date.accessioned	2017-04-21T06:49:36Z	-
dc.date.available	2017-04-21T06:49:36Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-1-4244-1954-8	en_US
dc.identifier.issn	1078-621X	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/SOI.2008.4656283	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135057	-
dc.language.iso	en_US	en_US
dc.title	Stable High-Density FD/SOI SRAM with Selective Back-Gate Bias Using Dual Buried Oxide	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/SOI.2008.4656283	en_US
dc.identifier.journal	2008 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS	en_US
dc.citation.spage	37	en_US
dc.citation.epage	+	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.identifier.wosnumber	WOS:000262065700014	en_US
dc.citation.woscount	1	en_US
顯示於類別：	會議論文