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dc.contributor.authorTang, Chun-Jungen_US
dc.contributor.authorLi, C. W.en_US
dc.contributor.authorWang, Tahuien_US
dc.contributor.authorGu, S. H.en_US
dc.contributor.authorChen, P. C.en_US
dc.contributor.authorChang, Y. W.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorLu, W. P.en_US
dc.contributor.authorChen, K. C.en_US
dc.contributor.authorLu, Chih-Yuanen_US
dc.date.accessioned2017-04-21T06:49:10Z-
dc.date.available2017-04-21T06:49:10Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-1507-6en_US
dc.identifier.urihttp://dx.doi.org/10.1109/IEDM.2007.4418894en_US
dc.identifier.urihttp://hdl.handle.net/11536/135135-
dc.description.abstractA new program disturb in a buried diffusion bit-line SONOS array is observed as a bit-line width is reduced. A multi-step Monte Carlo simulation is performed to explore the disturb mechanism. We find that the V, shift of a disturbed cell is attributed to impact ionization-generated secondary electrons in a neighboring cell when it is in programming. The effects of substrate bias, bit-line dimension and pocket implant on the program disturb are characterized and evaluated by a Monte Carlo simulation.en_US
dc.language.isoen_USen_US
dc.titleCharacterization and Monte Carlo analysis of secondary electrons induced program disturb in a buried diffusion bit-line SONOS flash memoryen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/IEDM.2007.4418894en_US
dc.identifier.journal2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2en_US
dc.citation.spage173en_US
dc.citation.epage+en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000259347800037en_US
dc.citation.woscount7en_US
Appears in Collections:Conferences Paper