Title: A Novel Hot-Electron Programming Method in a Buried Diffusion Bit-Line SONOS Memory by Utilizing Nonequilibrium Charge Transport
Authors: Wang, Tahui
Tang, Chun-Jung
Li, C. -W.
Lee, Chih Hsiung
Ou, T. -F
Chang, Yao-Wen
Tsai, Wen-Jer
Lu, Tao-Cheng
Chen, K. -C.
Lu, Chih-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: Low V(ds);new hot-electron programming;SONOS
Issue Date: 1-Feb-2009
Abstract: We propose a new hot-electron programming method with a low drain-to-source voltage in a buried-diffusion (BD) bit-line SONOS memory array. In this method, channel electrons are preaccelerated in a cell preceding a program cell. For a small bit-line width, some energetic electrons will traverse an n(+) BD region and enter a program cell with residual energy due to nonequilibrium transport. Our measurement result shows that this residual energy can significantly enhance hot-electron programming efficiency even at a V(ds) of 2.5 V. The concept of this method is verified by means of a Monte Carlo analysis. Our study shows that this method is more effective as a bit-line width reduces.
URI: http://dx.doi.org/10.1109/LED.2008.2009773
http://hdl.handle.net/11536/7716
ISSN: 0741-3106
DOI: 10.1109/LED.2008.2009773
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 30
Issue: 2
Begin Page: 165
End Page: 167
Appears in Collections:Articles


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