Title: | A Novel Hot-Electron Programming Method in a Buried Diffusion Bit-Line SONOS Memory by Utilizing Nonequilibrium Charge Transport |
Authors: | Wang, Tahui Tang, Chun-Jung Li, C. -W. Lee, Chih Hsiung Ou, T. -F Chang, Yao-Wen Tsai, Wen-Jer Lu, Tao-Cheng Chen, K. -C. Lu, Chih-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Keywords: | Low V(ds);new hot-electron programming;SONOS |
Issue Date: | 1-Feb-2009 |
Abstract: | We propose a new hot-electron programming method with a low drain-to-source voltage in a buried-diffusion (BD) bit-line SONOS memory array. In this method, channel electrons are preaccelerated in a cell preceding a program cell. For a small bit-line width, some energetic electrons will traverse an n(+) BD region and enter a program cell with residual energy due to nonequilibrium transport. Our measurement result shows that this residual energy can significantly enhance hot-electron programming efficiency even at a V(ds) of 2.5 V. The concept of this method is verified by means of a Monte Carlo analysis. Our study shows that this method is more effective as a bit-line width reduces. |
URI: | http://dx.doi.org/10.1109/LED.2008.2009773 http://hdl.handle.net/11536/7716 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2008.2009773 |
Journal: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 30 |
Issue: | 2 |
Begin Page: | 165 |
End Page: | 167 |
Appears in Collections: | Articles |
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