完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, Tahui | en_US |
dc.contributor.author | Tang, Chun-Jung | en_US |
dc.contributor.author | Li, C. -W. | en_US |
dc.contributor.author | Lee, Chih Hsiung | en_US |
dc.contributor.author | Ou, T. -F | en_US |
dc.contributor.author | Chang, Yao-Wen | en_US |
dc.contributor.author | Tsai, Wen-Jer | en_US |
dc.contributor.author | Lu, Tao-Cheng | en_US |
dc.contributor.author | Chen, K. -C. | en_US |
dc.contributor.author | Lu, Chih-Yuan | en_US |
dc.date.accessioned | 2014-12-08T15:10:06Z | - |
dc.date.available | 2014-12-08T15:10:06Z | - |
dc.date.issued | 2009-02-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2008.2009773 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/7716 | - |
dc.description.abstract | We propose a new hot-electron programming method with a low drain-to-source voltage in a buried-diffusion (BD) bit-line SONOS memory array. In this method, channel electrons are preaccelerated in a cell preceding a program cell. For a small bit-line width, some energetic electrons will traverse an n(+) BD region and enter a program cell with residual energy due to nonequilibrium transport. Our measurement result shows that this residual energy can significantly enhance hot-electron programming efficiency even at a V(ds) of 2.5 V. The concept of this method is verified by means of a Monte Carlo analysis. Our study shows that this method is more effective as a bit-line width reduces. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Low V(ds) | en_US |
dc.subject | new hot-electron programming | en_US |
dc.subject | SONOS | en_US |
dc.title | A Novel Hot-Electron Programming Method in a Buried Diffusion Bit-Line SONOS Memory by Utilizing Nonequilibrium Charge Transport | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2008.2009773 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 30 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 165 | en_US |
dc.citation.epage | 167 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000262861600022 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |