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dc.contributor.authorChou, C. -S.en_US
dc.contributor.authorLee, R. -K.en_US
dc.contributor.authorPeng, P. C.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorLin, G.en_US
dc.contributor.authorYang, H. P.en_US
dc.contributor.authorChi, J. Y.en_US
dc.date.accessioned2017-04-21T06:49:10Z-
dc.date.available2017-04-21T06:49:10Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-0641-8en_US
dc.identifier.urihttp://dx.doi.org/10.1109/OMEMS.2007.4373817en_US
dc.identifier.urihttp://hdl.handle.net/11536/135138-
dc.description.abstractWe develop a model for the slow light in the Vertical Cavity Surface Emission Lasers (VCSELs), with the combinations of cavity and the population pulsation effects. The dependences of pumping power, injection current and wavelength detuning for the group delays are demonstrated theoretically and experimentally. Up to 65 ps group delays and up to 10 GHz modulation frequency can be achieved in the room temperature at the wavelength of 1.3 mu m. Based on the experimental parameters of quantum dot VCSEL structures, we show that the resonance effect of laser cavity plays a significant role to enhance the group delays.en_US
dc.language.isoen_USen_US
dc.subjectVCSELen_US
dc.subjectslow-lighten_US
dc.titleModeling of slow light in vertical cavity surface emission lasersen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/OMEMS.2007.4373817en_US
dc.identifier.journal2007 IEEE/LEOS INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICSen_US
dc.citation.spage15en_US
dc.citation.epage+en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000251224200009en_US
dc.citation.woscount0en_US
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