統計資料
總造訪次數
| 檢視 | |
|---|---|
| Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric | 1 |
本月總瀏覽
檔案下載
| 檢視 |
|---|
國家瀏覽排行
| 檢視 | |
|---|---|
| 美國 | 1 |
縣市瀏覽排行
| 檢視 | |
|---|---|
| Menlo Park | 1 |
| 檢視 | |
|---|---|
| Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric | 1 |
| 檢視 |
|---|
| 檢視 | |
|---|---|
| 美國 | 1 |
| 檢視 | |
|---|---|
| Menlo Park | 1 |