標題: Novel strained CMOS devices with STI stress buffer layers
作者: Chen, Hung-Ming
Hwang, Jiunn-Ren
Li, Yiming
Yang, Fu-Liang
電信工程研究所
Institute of Communications Engineering
公開日期: 2007
摘要: STI stress buffer techniques including sidewall stress buffer and channel surface buffer layers are developed to reduce the impact of compressive STI stress on the mobility of advanced N-MOS devices. For L-g down to 35nm, 7% improvement of drive current at N-MOS has been achieved, while no degradation at P-MOS drive current and maintaining the same junction leakage at both N-MOS and P-MOS. A stress relaxation model with simulation is proposed to account for the enhanced transportation characteristics.
URI: http://dx.doi.org/10.1109/ISPACS.2007.4445828
http://hdl.handle.net/11536/135148
ISBN: 978-1-4244-0584-8
DOI: 10.1109/ISPACS.2007.4445828
期刊: 2007 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS
起始頁: 80
結束頁: +
Appears in Collections:Conferences Paper