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dc.contributor.authorWu, S-Cen_US
dc.contributor.authorLee, Y. -J.en_US
dc.contributor.authorChang, K. -H.en_US
dc.contributor.authorLin, S. -Yen_US
dc.contributor.authorCho, A. -T.en_US
dc.contributor.authorChiu, C. -F.en_US
dc.contributor.authorHuang, C. -Den_US
dc.contributor.authorSha, J. -R.en_US
dc.date.accessioned2019-04-03T06:47:40Z-
dc.date.available2019-04-03T06:47:40Z-
dc.date.issued2007-01-01en_US
dc.identifier.issn1742-6588en_US
dc.identifier.urihttp://dx.doi.org/10.1088/1742-6596/61/1/248en_US
dc.identifier.urihttp://hdl.handle.net/11536/135176-
dc.description.abstractA qusai three dimensional aluminum metallic photonic crystal (Q-3D Al MPC) composed with five layers of Al rod arrays was fabricated from IC foundry. The qusai means that MPC was made out under constrain of the traditional metallization processes in IC manufacture during current foundry model, in that the vertical distance between layers is about 1 mu m while the horizontal pitch is about 350 nm. The aim of this study is to evaluate the feasibility of mass production of MPC by using the modern IC technology. The novel optical properties are investigated in order to estimate the photonic band gap (PBG) behavior under this qusai structure. There exists an obvious PBG effect ranging from 3.5 to 7.5 mu m and some other sharp period of transmission region.en_US
dc.language.isoen_USen_US
dc.subjectAl metallic photonic crystalen_US
dc.subjectphotonic band gapen_US
dc.titleOptical Properties Study in Qusai Three Dimensional Aluminum Metallic Photonic Crystalen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1088/1742-6596/61/1/248en_US
dc.identifier.journalPROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGYen_US
dc.citation.volume61en_US
dc.citation.spage1256en_US
dc.citation.epage1260en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000291445400248en_US
dc.citation.woscount0en_US
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