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dc.contributor.authorWu, S-Cen_US
dc.contributor.authorHou, F-Jen_US
dc.contributor.authorJang-Jian, P-Cen_US
dc.contributor.authorTsai, M-Sen_US
dc.contributor.authorChen, M-Cen_US
dc.contributor.authorLi, L-Sen_US
dc.contributor.authorHuang, J-Yen_US
dc.contributor.authorLin, S-Yen_US
dc.date.accessioned2019-04-03T06:47:30Z-
dc.date.available2019-04-03T06:47:30Z-
dc.date.issued2007-01-01en_US
dc.identifier.issn1742-6588en_US
dc.identifier.urihttp://dx.doi.org/10.1088/1742-6596/61/1/249en_US
dc.identifier.urihttp://hdl.handle.net/11536/135177-
dc.description.abstractA 3D copper (Cu) metallic photonic crystal (MPC) with 180nm line width was fabricated by electroless plating. The mold of 3D MPC for Cu replacement is poly-Si. It has been verified as an enhancing thermal photovoltaic effect while the mold was transferred into tungsten MPC by chemical vapor deposition method. The 5 layers structure of Cu MPC was clear observed with scanning electron microscopy. The photonic band-gap ranged from 1.5 to 13 m was measured by Fourier transform infrared spectroscopy (FTIR) instrument.en_US
dc.language.isoen_USen_US
dc.subjectCopper metal photonic crystalen_US
dc.subjectelectroless platingen_US
dc.subjectphotonic band-gapen_US
dc.titleFabrication of Three Dimensional Cu Metallic Photonic Crystal by Electroless Platingen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1088/1742-6596/61/1/249en_US
dc.identifier.journalPROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGYen_US
dc.citation.volume61en_US
dc.citation.spage1261en_US
dc.citation.epage1265en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000291445400249en_US
dc.citation.woscount4en_US
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