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dc.contributor.authorNhan Ai Tranen_US
dc.contributor.authorSang, Chen-Hsiangen_US
dc.contributor.authorPan, Fu-Mingen_US
dc.contributor.authorSheu, Jeng-Tzongen_US
dc.date.accessioned2017-04-21T06:48:58Z-
dc.date.available2017-04-21T06:48:58Z-
dc.date.issued2016-04en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.55.04EM01en_US
dc.identifier.urihttp://hdl.handle.net/11536/135190-
dc.description.abstractIn this paper, a double-junction n(+)/n(-)/n(+) polysilicon nanobelt selectively functionalized with platinum has been studied for hydrogen sensing application. The selective modification of the devices is performed by the combination of localized ablation of a resist and a lift-off process of e-beam evaporation of a catalyst material. The coverage of a Pt layer on the n(-) region is precisely controlled by adjusting Joule heating bias and pulse length. The Pt-functionalized devices show a rapid response to hydrogen with a limit of detection of only 5 ppm. The device with fully Pt-covered n(-) region is optimum for obtaining the best response to hydrogen. (C) 2016 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleControlled functionalization of a double-junction n(+)/n(-)/n(+) polysilicon nanobelt for hydrogen sensing applicationen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.7567/JJAP.55.04EM01en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume55en_US
dc.citation.issue4en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department分子醫學與生物工程研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Molecular Medicine and Bioengineeringen_US
dc.identifier.wosnumberWOS:000373929400134en_US
dc.citation.woscount0en_US
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