標題: | Strain-induced channel backscattering modulation in nanoscale CMOSFETs |
作者: | Chen, Hung-Wei Lin, Hong-Nien Ko, Chih-Hsin Ge, Chung-Hu Lin, Horng-Chih Huang, Tiao-Yuan Lee, Wen-Chin 交大名義發表 National Chiao Tung University |
公開日期: | 2006 |
摘要: | The channel backscattering ratios as well as the ballistic efficiency of strained CMOSFETs were studied for both nondegenerate and degenerate-limited cases. We found that the simple nondegenerate assumption can predict strain-induced change of ballistic efficiency with fair accuracy. The mechanism of drain current dependence on strain-induced mobility change was also investigated based on channel backscattering theory. |
URI: | http://hdl.handle.net/11536/135220 |
ISBN: | 1-4244-0181-X |
期刊: | 2006 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS |
起始頁: | 62 |
結束頁: | + |
顯示於類別: | 會議論文 |