標題: Strain-induced channel backscattering modulation in nanoscale CMOSFETs
作者: Chen, Hung-Wei
Lin, Hong-Nien
Ko, Chih-Hsin
Ge, Chung-Hu
Lin, Horng-Chih
Huang, Tiao-Yuan
Lee, Wen-Chin
交大名義發表
National Chiao Tung University
公開日期: 2006
摘要: The channel backscattering ratios as well as the ballistic efficiency of strained CMOSFETs were studied for both nondegenerate and degenerate-limited cases. We found that the simple nondegenerate assumption can predict strain-induced change of ballistic efficiency with fair accuracy. The mechanism of drain current dependence on strain-induced mobility change was also investigated based on channel backscattering theory.
URI: http://hdl.handle.net/11536/135220
ISBN: 1-4244-0181-X
期刊: 2006 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS
起始頁: 62
結束頁: +
顯示於類別:會議論文