| 標題: | Strain-induced channel backscattering modulation in nanoscale CMOSFETs |
| 作者: | Chen, Hung-Wei Lin, Hong-Nien Ko, Chih-Hsin Ge, Chung-Hu Lin, Horng-Chih Huang, Tiao-Yuan Lee, Wen-Chin 交大名義發表 National Chiao Tung University |
| 公開日期: | 2006 |
| 摘要: | The channel backscattering ratios as well as the ballistic efficiency of strained CMOSFETs were studied for both nondegenerate and degenerate-limited cases. We found that the simple nondegenerate assumption can predict strain-induced change of ballistic efficiency with fair accuracy. The mechanism of drain current dependence on strain-induced mobility change was also investigated based on channel backscattering theory. |
| URI: | http://hdl.handle.net/11536/135220 |
| ISBN: | 1-4244-0181-X |
| 期刊: | 2006 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS |
| 起始頁: | 62 |
| 結束頁: | + |
| 顯示於類別： | 會議論文 |
- Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs / Lin, HN;Chen, HW;Ko, CH;Ge, CH;Lin, HC
- Correlating drain-current with strain-induced mobility in nanoscale strained CMOSFETs / Lin, Hong-Nien;Chen, Hung-Wei;Ko, Chih-Hsin;Ge, Chung-Hu;Lin, Horng-Chih
- The impact of uniaxial strain engineering on channel backscattering in nanoscale MOSFETs / Lin, HN;Chen, HW;Ko, CH;Ge, CH;Lin, HC
- 奈米尺寸之製程應變矽互補式金氧半場效電晶體之載子傳輸與負偏壓溫度不穩定之研究 / 林宏年;Hong-Nien Lin;林鴻志;黃調元;Horng-Chih Lin
- Characterizing the channel backscattering behavior in nanoscale strained complementary metal oxide semiconductor field-effect transistors / Lin, Hono-Nien;Chen, Hung-Wei;Ko, Chih-Hsin;Ge, Chung-Hu;Lin, Horng-Chih
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