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dc.contributor.authorChen, Hung-Weien_US
dc.contributor.authorLin, Hong-Nienen_US
dc.contributor.authorKo, Chih-Hsinen_US
dc.contributor.authorGe, Chung-Huen_US
dc.contributor.authorLin, Horng-Chihen_US
dc.contributor.authorHuang, Tiao-Yuanen_US
dc.contributor.authorLee, Wen-Chinen_US
dc.date.accessioned2017-04-21T06:48:25Z-
dc.date.available2017-04-21T06:48:25Z-
dc.date.issued2006en_US
dc.identifier.isbn1-4244-0181-Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/135220-
dc.description.abstractThe channel backscattering ratios as well as the ballistic efficiency of strained CMOSFETs were studied for both nondegenerate and degenerate-limited cases. We found that the simple nondegenerate assumption can predict strain-induced change of ballistic efficiency with fair accuracy. The mechanism of drain current dependence on strain-induced mobility change was also investigated based on channel backscattering theory.en_US
dc.language.isoen_USen_US
dc.titleStrain-induced channel backscattering modulation in nanoscale CMOSFETsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2006 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERSen_US
dc.citation.spage62en_US
dc.citation.epage+en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000239791300020en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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