Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lee, Yao-Jen	en_US
dc.contributor.author	Fan, Chia-Hao	en_US
dc.contributor.author	Yang, Wen-Luh	en_US
dc.contributor.author	Lin, Wen-Yan	en_US
dc.contributor.author	Huang, Bohr-Ran	en_US
dc.contributor.author	Chao, Tien-Sheng	en_US
dc.contributor.author	Chuu, D. S.	en_US
dc.date.accessioned	2017-04-21T06:48:22Z	-
dc.date.available	2017-04-21T06:48:22Z	-
dc.date.issued	2006	en_US
dc.identifier.isbn	1-4244-0205-0	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135232	-
dc.language.iso	en_US	en_US
dc.title	Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IPFA 2006: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS	en_US
dc.citation.spage	88	en_US
dc.citation.epage	+	en_US
dc.contributor.department	物理研究所	zh_TW
dc.contributor.department	Institute of Physics	en_US
dc.identifier.wosnumber	WOS:000239918400017	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文