標題: Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride
作者: Lu, TY
Chao, TS
電子物理學系
Department of Electrophysics
公開日期: 1-四月-2005
摘要: A local strained channel nMOSFET has been fabricated by a stress control technique utilizing a stacked a-Si/poly-Si gate and a SiN capping layer. It is found that the transconductance (G(M)) of nMOSFETs increases as the thickness of a-Si is increased. We also found that the G(M) of devices with the SiN capping layer exhibits a 17% increase compared to that of its counterparts. The stacked gate a-Si/poly-Si with the capping layer can improve the G(M) further to 29% more than the single-poly-Si gate structure without SiN capping layer.
URI: http://dx.doi.org/10.1109/LED.2005.845499
http://hdl.handle.net/11536/13862
ISSN: 0741-3106
DOI: 10.1109/LED.2005.845499
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 26
Issue: 4
起始頁: 267
結束頁: 269
顯示於類別:期刊論文